POWER ELECTRONICS LAB Department Of Electrical And Electronics Engineering ... Experiment- 1 1. TRIAC = TRI ode for A lternating C urrent. %%EOF These triggering circuits usually generate trigger pulses for firing the device. NAME OF LABORATORY: Engg. _____ Figure 1.4: TRIAC DC Circuit 5.2 Momentarily press S1 (press and release). ... if provided for this experiment. Tabulation No 1. 0000014974 00000 n 0000014910 00000 n A multimeter can be used to test the health of a triac. V BO is the maximum forward or reverse voltage that the triac can tolerate before it breaks over into uncontrolled conduction. To determine holding, latching current and break over voltage of given SCR. V BO is the maximum forward or reverse voltage that the triac can tolerate before it breaks over into uncontrolled conduction. Fig. NV6530 SCR Characteristic Trainer 2. 5 5.0 TRIAC TRIGGERING MODES 5.1 Create the TRIAC AC POWER CONTROL circuit block. Choose Experiment 2: “RTD Characteristics”. 0000435236 00000 n Power Electronics Lab manual SSIT - 1 - CONTENTS Experiment No Page. ?��t��s���FV1���Y[Z,��I���g2�NI|w��^w&��U��&ut�&ut�OW���E��Y�lQ>�Ѯ%����˧7��C�Oo��_���-�~��.�'���E���EӮ�#��GE����x��F�+V�-6魆�>��3I�GEN�]�� To plot the characteristics of SCR and to find the forward resistance, holding current and ... readings for every 5V and enter the readings in the tabular column. �%d����f5�� This is CE. APPARATUS REQUIRED: i. Experiment 5 Registration No. 0000091415 00000 n Physics Page 1 of 8 EXPERIMENT: DIODE & ZENER DIODE Objective:- To study the forward and reverse bias characteristics of ☞Now Switch on SPDT then note down the readings. Objective The objectives of this experiment are to: a) determine the characteristics of flow over a rectangular and a triangular weir, and b) determine the value of the discharge coefficient for both notches. & latching current I am aware that as a member of the academic community it is my responsibility to turn in all suspected violators of the honor code. Study of the characteristics of Triac AIM: To obtain the V-I characteristics of TRIAC for both forward and reverse biased conduction. Thank you. endobj /Contents 94 0 R POWER ELECTRONICS LAB MANUAL (NEE-551) DEPARTMENT OF ELECTRICAL & ELECTRONICS ... To study V-I characteristics of SCR and measure latching and holding currents. iv List of Experiments Exp No Experiment Nmae Page No 1 Static characteristics of SCR and DIAC. >> �5��e ���Yއ�"f ���WC�&�we�޹-�dcku�ͥ%���u0Q�:�*��赯���%����5�����ҨYܮF��WԬn"Z�5��~����8 �^Kfg�+4;k�}ϒ���Y��>KE9��i -�튠%b[�W-f-k5e�"���%�i -�FҚ¶?�bi 2 �%�W4-� �%s�ѱdW�,�ꎢ坩�k1�XҐZr-!��z��c_�8��0ڶ�K�,��ZC�&��ۊ�5��Bk�!��ZC�+�� where VMT21 and VGl are the voltages of terminal MT2 and gate with respect to terminal MT1.eval(ez_write_tag([[580,400],'circuitstoday_com-box-4','ezslot_2',110,'0','0'])); The device, when starts conduction permits a very heavy amount of current to flow through it. <<8F8672D220EEB67CA04F4BA99C79657A>]/Prev 1071719>> Experiment 5 Registration No. 0000432995 00000 n Theory: An TRIAC is a device which can be turned on through the gate pulse for both positive and negative values of V 8.2. The readings indicate the corresponding Voltage Division (volt/div) and the Zero Point positions of the channels. When is the sensitivity of TRIAC greatest? 0000014932 00000 n 2.5V-45V 1.5V-AGMRCET DEPT OF E&C Tabular Column: V1 = V DS2 =15V or 12V V GS V I DS (mA) 0V 8V(Max) (b) Drain Characteristics… Press Esc to cancel. POWER ELECTRONICS LAB, EED 3 ELECTRICAL ENGINEERING DEPARTMENT POWER ELECTRONICS LAB STATIC CHARACTERISTICS OF SCR Experiment 1a Aim: To Study the static characteristics of SCR Apparatus: SCR characteristic trainer kit Output characteristics The base current I B is kept constant (eg. 0000371364 00000 n OVERVIEW During the course of this experiment we will determine a number of important device parameters of an n-channel enhancement mode MOSFET by analyzing a number of DC characteristics. 2. 2mm Patch cords. Characteristics of Uni Junction Transistor DIGITAL EXPERIMENTS (12) 6. Connect the circuit as shown in Figure 1.4. The V-I characteristics for triac in the Ist and IIIrd quadrants are essentially identical to those of an SCR in the Ist quadrant. IGBT Characteristics 17 5. The family of curves obtained by plotting I C against V CE for each value of I B is called output characteristics. 0000491551 00000 n Zener Diode Characteristics i) V-I Characteristics ii) Zener Diode act as a Voltage Regulator 4. Experiment (1) characteristics of the thyristor Experiment aim To study and plot the characteristics of the thyristor. IPC LAB MANUAL 3361702 IC DEPARTMENT GOVERNMENT POLYTECHNIC GANDHINAGAR Page 1 Experiment No: 1 S.C.R. }U4s�œ}�f�jͅ]�{w��ﭛ�V����b^�5�dB}qȮ��D��d �Զ�W�j���_��㖵�@��A��Es��%M���hb���Wܵ�MD6Bm��ь�Hn���y\�߂�m����M�kWd��em�8qe�8�X`�rP�B:SX]3�tS��zAR/ Q�k?&H�o����O�e�ʷ���O}���BE.��" ���@yWAE@���(�$��B�#�霾���T�x�x���_4P���xD������_|�@���_0P������D!�/(Y|�@E@��; ���������N7?8Pd~h����:x����b�%�w@(��� �(6�#�C�n~p����@����|�C��J��i�(6?0Pb~��:���@����b�;"������ ������7?4Pl~`�����v����b���wDط���(1�bٝo~h����@����|�C�������(2?4Pb~DH;���@�����; ���������gN7?8P �c�c�D��8��C�(/*#�"�p$ ۡ�����)�bZ�f�w$��ŠQ�9d�)6�N�;����.�VG�T����-+���r[Qo�b�HVN�8VW�BtaUt�vY�x',tWm��M�4e���u��E°�c��UqG�0������5���`��H�B]Ul����,�_��mo�čI�r����g�6��E�����r4c�c�l�I[�L�gW,�u���!�����N��q(*�� Do you know how RFID wallets work and how to make one yourself? Increase in V BB1 increases the value of peak and valley voltages. ��ju�٘�2&R��[��}�B�6�ٔ�=g���b﭅o��g�x�b0����(�n���s��D��v�fƝ3��3šG��0g�r��p\J3��cR�9P-�b�DU\��>�z��"(�)4P�Sh�ħ���>J| %�쏢 VI CHARACTERISTICS OF IGBT 20 5. Study of Characteristics of SCR, MOSFETs &IGBTs AIM: 1. 7-15 3 Controlled HWR & FWR using RCcircuit. Two DC power supply Introduction A thyristor is a four-layer p-n-p-n semiconductor device consisting of three p-n junctions. Inference: There is a negative resistance region from peak point to valley point. Two AVO meter 4. As���f�wS�f��)�]�1���m�ek You compiled your data and plotted the points on a graph to form a “family” of characteristic curves To get your data, you first set Experiment No. Its equivalent circuit is a pair of inverted four layer diodes. Circuit Diagram: Model Graph: Theory: An SCR is a device which can be turned on through the gate pulse and turned off using power circuit i.e., turn on is controlled but turn off is uncontrolled in an SCR. To plot the TRIAC Characteristics 93. 4. Study of Characteristics of SCR, MOSFETs &IGBTs AIM: 1. Experiment procedure 1. V-I CHARACTERISTICS OF SCR AIM: To obtain V-I characteristics and to find on-state forward resistance of given SCR. <> 0000015723 00000 n NOTE: You can check out and keep the portable breadboards, VB-106 or VB-108, from the 111-Lab for yourself ( Only one each please) This is the first of three labs on basic semiconductor components. MT2 is positive with respect to MTX in the first quadrant and it is negative in the third quad rant. 0000241512 00000 n 20µA) by … Repeat the experiment with the V-notch weir plate, but with 5 mm increments in water surface elevation. V DRM is the maximum repetitive peak voltage (usually the maximum peak voltage of the applied AC wave) that can be reliably tolerated. to a value of 50 mV to ensure linear operation. Increase in V BB1 increases the value of peak and valley voltages. Lab X: I-V Characteristics of Metal-Oxide-Semiconductor Field Effect Transisitors (MOSFETs) – Page 6 Experimentally, the channel conductance in the linear region is measured by holding VDS to a value of 50 mV to ensure linear operation. VI CHARACTERISTICS OF MOSFET 14 4. xref Phone : 0120-2323854-58 2 | DEPARTMENT OF ELECTRICAL & ELECTRONICS ENGINEERING, Two AVO meter 4. 93 0 obj It has similar characteristics to an SCR but it differs for it consists of a DIAC with a gate terminal. The TRIAC is 5 layer, 3 terminal Power semiconductor device. Plot the tabulated readings on a graph sheet with I E on X-axis and V E on Y-axis. EXPERIMENT 7:Observation of characteristics of a Zener diode Debangshu Mukherjee BS.c Physics,1st Year Chennai Mathematical Institute 7.11.2008 1 Aim of experiment In this experiment, we try to observe the relation between Testing triac using a multimeter. ~u-�l���[�~=�V��藰��������� ����o��O�^Y�{�x�Z��4������`�M���'x�r@(��� �9&�s8P9�jx4!|J���p4��9���0)���b>G��hB����a�N�s0L��#�V��'4L���V��'0L���V��'0L!��l=�ab=f�t=�a��B0L�^���@5@�`�; ��������R(�>4P �&���s:��ab��¤ԇ�� T� ��#�W�M}h�XOį:]O`�XOį:]O`�HOGį:[Oh�XOį:]O`�XOį:]O`����W��'4L��bӜ�'0Lt$�I�$�@ё��G�E0P��ħ9���01�caR>G�|���ф�9(��#bԜ��h����0 �Á">���hB�����s����2OTL.iaE�p����O�D��UH��i��bnnF�h�sa6��29s��`'s��"a��'g�o�|�n �b�Δq#�T�8a��$z��' ☞Repeat from step 2 for another value of gate current IG. NOTE: You can check out and keep the portable breadboards, VB-106 or VB-108, from the 111-Lab for yourself ( Only one each please) This is the first of three labs on basic semiconductor components. The corresponding collector current I C is noted. In this lab, you will study the I-V characteristics and small-signal model of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). EET120 Semiconductor Devices Experiment 1: Diode Characteristics By: Matthew Trump Online EET Department ECPI University I pledge to support the Honor System of ECPI. The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. 1 Thyristors DC Characteristics PREPARED BY: J.B. G. Ibarra 1.0 OBJECTIVES 1.1 To become 6.3.2 illustrates the main characteristics of the triac. ��(�) ы�} APPARATUS REQUIRED: Trainer kit, Patch cards, Multimeters. endobj VI CHARACTERISTICS OF TRIAC 8 3. Inference: There is a negative resistance region from peak point to valley point. The reading shows the setting of main time base (time/div). 0000015657 00000 n Turn the Heater ON by pressing ON the Heater Switch on the screen (Heating Mode). Symbol Symbol Name Units E electric field V / cm (6.3). Notice from the I-V characteristics that the output collector current is controlled by the input base current as modeled in Equation. 2. CIRCUIT DIAGRAM: Fig 1.1(a) Circuit diagram for VI characteristics of SCR. Refer figure 4.2. 2. 0000089174 00000 n �N��Z���>r�91��0�*s����#m��bM��5��5(�(�T�i A typical triac has the following voltage/current values: This information helped me in labs very much. ��(�)0P�S�%�} 0000491445 00000 n b) Start pumps 1 and 2, and increase the speed until the pumps are operating at 60 rev/sec. It can be triggered by reaching its breakover voltage (+ or -). TRIAC Characteristics 9 3. A multimeter can be used to test the health of a triac. k*�-��)4P�)�����@��R[|ISp�XS l�eM��bMy�ŗ5��4��K��ŚJ`�/k Figure 9.3: Position of the notch and Vernier height gauge to set the datum. TRANSIENT 6. Dual channel Oscilloscope 3. Rectifiers (without and with filter) i) Half-wave Rectifier ii) Full-wave Rectifier 5. MOSFET Characteristics 15 4. 0000299407 00000 n S. No. 0000184919 00000 n 6. A chart of the symbols used in the Lab IV. �(�t�KgJ%��J~u�)�P:�HL顁�����bJ�%?�U;(�t8P �(�cN�$�����. Is the triac conducting? Adjust +V A to 6.0 Vdc. Power Electronics Lab Manual VII Sem EC EXPERIMENT-1(a) V-I CHARACTERISTICS OF SCR AIM: 1. To analyze RC- … Rheostat – Working, Construction, Types & Uses, RFID Reader and Tag – Ultimate Guide on RFID Module, Instantaneous on-state voltage – 1.5 Volts. Set up the experiment according to circuit (figure. <> 0000491768 00000 n The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. �2�m�1�U��@�i�$�Y��ր ��4�� Testing triac using a multimeter. Aim: To study the V-I characteristics of SCR. ��(�)0P��� 6.3.2 illustrates the main characteristics of the triac. Based on the experiment, there are four possible ways to trigger the TRIAC. It has a pair of phase controlled SCRs connected in inverse parallel manner on the same chip. _____ 5.3 Measure the voltage across R6. 0000503880 00000 n 7-15 3 Controlled HWR & FWR using RC Triggering circuit. The first quadrant is the region wherein MT2 is positive w.r.t MT1 and vice- versa for the third quadrant. Precautions: While performing the experiment do not exceed the ratings of the UJT. 1-6 2 Static characteristics of MOSFET & IGBT. 91 0 obj 3. To plot the characteristics of SCR and to find the forward resistance, holding current and latching current. Readings taken at 10 nm intervals are sufficient to outline an absorbance spectrum except perhaps at absorbance peaks where additional points may be required to characterize the curve more completely. Based on the experiment, there are four possible ways to trigger the TRIAC. CIRCUITS LABORATORY EXPERIMENT 6 TRANSISTOR CHARACTERISTICS 6.1 ABSTRACT In this experiment, the output I-V characteristic curves, the small-signal low frequency equivalent circuit parameters, and the switching Theory:-A Semiconductor diode is prepared by joining P and N sections of a P-N Junction Diode Characteristics 3. 0000017964 00000 n Type above and press Enter to search. 0000239271 00000 n LAB SUBJECT CODE: BT 2001 NAME OF DEPARTMENT: Engg. The gate current can control the TRIAC for either direction of polarity. ... like a triac without gate terminal, as shown in figure. _____ Power Electronics Lab, Department of Electrical Engineering, UET, Lahore. 94 0 obj It has similar characteristics to an SCR but it differs for it consists of a DIAC with a gate terminal. I will refrain from any form of academic dishonesty or deception, such as cheating or plagiarism. It can be triggered by reaching its breakover voltage (+ or -). You compiled your data and plotted the points on a graph to form a “family” of characteristic curves To get your data, you first set the base current on a specific value, and then varied V … Power electronic trainer 2. 0000000015 00000 n T����T�x��$ Physics LAB SUBJECT CODE: BT 2001 NAME OF DEPARTMENT: Engg. Characteristics AIM: To Test the V-I characteristics of S.C.R. startxref UJT Triggering of 3. The gate is the control terminal of the device. ☞Now vary VAK voltage slowly, correspondingly note down the VAK and IA readings and plot the graph. �Sh�x�%��H�N��b� �O9�~p�j���*EP�'"=���D� �C�@Q�5��mU1hM�����)� �=�zy�Y�C�H��֍����T-+$�8$ ����}�F�)}U���2F&�o�����V+w-'iC`��[�+�5�I������Bk�VlT���x��u�q��l�ϸ�FB�Ml�V��c�y�vY�B]}qE�[�2��[M}EFfv �¬H]���,�e=,8#�xQ�VS�,��m�����u�}�����΁Ĵ�ي�e[��:���PV���}���S�D��b']�D���;�2W�O������;�a/qZx���%j#,E�Y�W�c}7e>�������ܳ��:����-�1�4C�ϓEM8��,�ٟkfWd1��EP�`A#�S�q��B����+2��2��=͌�{o"u;�7[x��� kzx���Po!aE�Vq��֭�~}5t���S��`�R Aq�|0P�����*T$����.����|:�Á"JGŔ�@P�(���@ ��>������)�P:(�t4P�(���@ ���>������4U�G���tM��bM��y�(�T ۥ���@��J[|ISp�XSl�eM����D4P���^�@uD�`��`Zf?4P�~`����@1����D����^���@1����C���#�_.`/�~p�XS���5��5��^YSh�HS��mhISp�XS l�eM��bM9�ŗ5���é`�/i Characteristics of TRIAC The V-I characteristics of TRIAC are discussed below The triac is designed with two SCRs which are fabricated in the opposite direction in a crystal. Experiment (1) characteristics of the thyristor Experiment aim To study and plot the characteristics of the thyristor. The triac is designed with two SCRs which are fabricated in the opposite direction in a crystal. of ECE CREC 3 1. �$x����H7��d'JR�v�}F���'H$�H]'��B��"W�8�'�P5 �kV��iYXq��@?|ZY�]�ykob��}����k,�!p��9=�p� ���%�} 01-04 2 Static characteristics of MOSFET and IGBT. 6. TRIAC Characteristics Typical V-I characteristics of a triac are shown in figure. Apparatus 1. trailer <> The gate-triggering circuits for the triac are almost same like those used for SCRs. 05-09 3 Controlled HWR and FWR using RC triggering circuit 10-14 4 UJT firing circuit for HWR and FWR circuits 15-20 5 Generation of firing signals for thyristors/ trials using digital circuits / microprocessor. Figure 6.3b. b) Start pumps 1 and 2, and increase the speed until the pumps are operating at 60 rev/sec. c) Turn the bench regulating valve to the fully closed position. 0000182678 00000 n stream *TRIAC’s have very small switching frequencies. q�q�ْ�����H[�:o�p;Z������%sKoK��!�zE�moq��lB�"�.k+�X芺%��a���5� The V-I characteristics for triac in the Ist and IIIrd quadrants are essentially identical to those of an SCR in the Ist quadrant. View ind module 1_4Q1920.pdf from ECEA 103 at Mapúa Institute of Technology. RC Triggering Circuit – HWR & FWR 196. LAB MANUAL ELECTRONIC DEVICES & CIRCUITS LAB Dept. ; V GT is a range of gate voltages that will trigger conduction. VI Characteristics of PN Junction Diode 2. The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. 6.3.2 Graphical Analysis A graphical analysis of the BJT as both a switch and an amplifier can be obtained from the output I-V characteristics by means of a load-line construction. 2. Repeat the above experiment for different values of VDS2 = 15V. This is repeated for increasing values of I B. Lab IV: Silicon Diode Characteristics – Page 2 3. Apparatus:-Experimental kit and patch cords. Two DC power p-n . The experiment is repeated with V CE kept constant say 2V, 3V, 4V etc. 24. Table 1. _____ Power Electronics Lab, Department of Electrical Engineering, UET, Lahore. Collect seven head and discharge readings for each weir. Start taking readings by pressing [Read] button over different temperature values. 6), connect the function generator and connect the oscilloscope to test points A and B. Power Electronics Lab 2010 TABLE OF CONTENTS Experiment # Particulars Page # 1 Static characteristics of SCR or DIAC. Operating characteristics of triac in the 1st and 3rd quadrants are similar but for the direction of flow of current and applied voltage. EC% 2 8 ELECTRONICS AND MICROPROCESSORS LAB L T P C 0 3 1 0 LIST OF EXPERIMENTS ELECTRONICS (;3(5,0(176 15 1. POWER ELECTRONICS LAB MANUAL (NEE-551) DEPARTMENT OF ELECTRICAL & ELECTRONICS ENGINEERING 27, Knowledge Park-III, Greater Noida, (U.P.) 5. In this blog post , we can see VI Characteristics of TRIAC, this post contains circuit diagram and model graphs for VI Characteristics of TRIAC Procedure Experiment Steps Connections are made as shown in the circuit ; V DRM is the maximum repetitive peak voltage (usually the maximum peak voltage of the applied AC wave) that can be reliably tolerated. Power electronic trainer 2. The V-I characteristics of a TRIAC is based on the terminal MT1 as the reference point. 10. 16-19 4 20 AC- voltage controller by using TRIAC-DIAC combination.-22 5 UJT firing circuit for HWR & FWR. 01-04 2 Static characteristics of MOSFET and IGBT. This list is not all-inclusive; however, it does contain the most commonly used symbols. 3. Show your calculations for voltage with firing angle in reading 3 Show your calculations for voltage with firing angle in reading 7 Sketch the variation of output voltage with firing angle. 5 R-C Triggering TRIAC Circuit Objectives: 1. The base current I B is kept constant (eg. RC iv List of Experiments Exp No Experiment Nmae Page No 1 Static characteristics of SCR and DIAC. 0 Apparatus 1. Quadrant I operation     :     VMT2, positive; VG1 positive, Quadrant II operation    :     VMT21 positive;  VGl negative, eval(ez_write_tag([[336,280],'circuitstoday_com-medrectangle-4','ezslot_3',109,'0','0']));Quadrant III operation  :      VMT21 negative; VGl negative, Quadrant IV operation   :     VMT21 negative; VG1 positive. Characteristics of Triac Typical V-I characteristics of a triac are shown in figure. and corresponding graphs are plotted. Please switch off the kit when not in use. a��+�����F]]�5���3U�. Fig. Figure (2): RTD Characteristics Experiment. 21. 0000491689 00000 n SCR Characteristics 3 2. Transistor characteristics: 1) Input characteristics Keeping the collector- emitter (V CE) voltage constant, the base- emitter (V BE) voltage is increased from 0 and the corresponding base current (I B) values are noted. This is expected because triac consists of two SCRs connected in parallel but opposite in direc tions. and corresponding graphs are plotted. 1-6 2 Static characteristics of MOSFET & IGBT. Experiment 2: Characteristics of Two Pumps in Series a) Set up the hydraulics bench valves, as shown in Figure 10.9, to perform the two pumps in series test. Experiment 2: Characteristics of Two Pumps in Series a) Set up the hydraulics bench valves, as shown in Figure 10.9, to perform the two pumps in series test. Lab 3 Appendices: Data sheets and Curve Tracer operation. This may lead to damage of the UJT. The trigger pulse should be of sufficient magnitude and duration so that firing of the device is assured. Apparatus Required: 1. Record the readings. Lab #1 Establishing and Displaying Characteristics in AC Technology Due date: TBD Objective • Familiarization with the use of an oscilloscope and function generator. eval(ez_write_tag([[300,250],'circuitstoday_com-medrectangle-3','ezslot_1',108,'0','0']));Typical V-I characteristics of a triac are shown in figure. �Sh�8�(Y|�@%@����,�`�d��X��u T���X�ħ�K"�(�)0P�S`��'�`/��S`�ħ�@�O���oh*�K"�(�h�(����>*��*'@M ����%���^���@ ����CU5%���/6��b?4P�~p�R��=�O�:���Sh�d�J`���N���u Note: If the connections are made wrong the kit may get damaged. k*�-��)4PtF���(�@��H�#F4PB�l�Δ��)�P:(�t4P�(���@1���:O��( S:(�t8P�(��?��(�We�`z2E��3o�Fk�A�8SS��̳b�+��� 7. 0000001315 00000 n Expected graph: Plot the tabulated readings on a graph sheet with I E on X-axis and V E on Y-axis. As already said in previous blog posts, the gate triggering may occur in any of the following four modes. EXPERIMENT TITLE MODULE NO. IPC LAB MANUAL 3361702 IC DEPARTMENT GOVERNMENT POLYTECHNIC GANDHINAGAR Page 6 Experiment No: 3 TRIAC Characteristics AIM: To study the V-I characteristics of a TRIAC in both directions and also in 0000504293 00000 n %PDF-1.4 k��-��)4P�������@����˚BE�*l�%M��bME�ŗ5��5��_�(�T�`�/i IGBT Characteristics 175. The sensitivity of TRIAC is greatest in I quadrant (mode 1) when MT2 and gate are positive with respect to MT 1 and it triggers for a … and determine the Break over voltage, on state resistance Holding current. This large inrush of current must be restricted by employing external resist ance, otherwise the device may get damaged. Sketch the VI characteristics of TRIAC. BACKGROUND INFORMATION 3.1 CHART OF SYMBOLS Here is a chart of symbols used in this lab. 0000297166 00000 n 2. ��H>��} It is a bidirectional device, means it can conduct current in both the directions. Our webiste has thousands of circuits, projects and other information you that will find interesting. 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